Manipulating topological-insulator properties using quantum confinement
نویسندگان
چکیده
منابع مشابه
Emergent quantum confinement at topological insulator surfaces.
Bismuth-chalchogenides are model examples of three-dimensional topological insulators. Their ideal bulk-truncated surface hosts a single spin-helical surface state, which is the simplest possible surface electronic structure allowed by their non-trivial Z(2) topology. However, real surfaces of such compounds, even if kept in ultra-high vacuum, rapidly develop a much more complex electronic stru...
متن کاملSynthesis and Quantum Transport Properties of Bi2Se3 Topological Insulator Nanostructures
Bi₂Se₃ nanocrystals with various morphologies, including nanotower, nanoplate, nanoflake, nanobeam and nanowire, have been synthesized. Well-distinguished Shubnikov-de Haas (SdH) oscillations were observed in Bi₂Se₃ nanoplates and nanobeams. Careful analysis of the SdH oscillations suggests the existence of Berry's phase π, which confirms the quantum transport of the surface Dirac fermions in b...
متن کاملFloquet topological insulator in semiconductor quantum wells
Topological phases of matter have captured our imagination over the past few years, with tantalizing properties such as robust edge modes and exotic non-Abelian excitations, and potential applications ranging from semiconductor spintronics to topological quantum computation. Despite recent advancements in the field, our ability to control topological transitions remains limited, and usually req...
متن کاملQuantitative Structure-Property Relationship to Predict Quantum Properties of Monocarboxylic Acids By using Topological Indices
Abstract. Topological indices are the numerical value associated with chemical constitution purporting for correlation of chemical structure with various physical properties, chemical reactivity or biological activity. Graph theory is a delightful playground for the exploration of proof techniques in Discrete Mathematics and its results have applications in many areas of sciences. A graph is a ...
متن کاملQuantum strain sensor with a topological insulator HgTe quantum dot
We present a theory of electronic properties of HgTe quantum dot and propose a strain sensor based on a strain-driven transition from a HgTe quantum dot with inverted bandstructure and robust topologically protected quantum edge states to a normal state without edge states in the energy gap. The presence or absence of edge states leads to large on/off ratio of conductivity across the quantum do...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: New Journal of Physics
سال: 2017
ISSN: 1367-2630
DOI: 10.1088/1367-2630/aa7913